发明授权
- 专利标题: Light-emitting device, method for manufacturing the same, and electronic apparatus
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申请号: US13323886申请日: 2011-12-13
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公开(公告)号: US08368301B2公开(公告)日: 2013-02-05
- 发明人: Hisao Ikeda , Takahiro Ibe , Junichi Koezuka , Kaoru Kato
- 申请人: Hisao Ikeda , Takahiro Ibe , Junichi Koezuka , Kaoru Kato
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权: JP2007-162046 20070620
- 主分类号: H01L51/50
- IPC分类号: H01L51/50 ; H01L51/52 ; H01L51/54
摘要:
The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects.
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