发明授权
- 专利标题: NMOS-based feedback power-clamp for on-chip ESD protection
- 专利标题(中): 基于NMOS的反馈功率钳位,用于片上ESD保护
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申请号: US12795657申请日: 2010-06-08
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公开(公告)号: US08369054B2公开(公告)日: 2013-02-05
- 发明人: Xiaowu Cai , Beiping Yan , Xiaoyang Du , Xiao Huo , Xiaoyong Han , Bingyong Yan
- 申请人: Xiaowu Cai , Beiping Yan , Xiaoyang Du , Xiao Huo , Xiaoyong Han , Bingyong Yan
- 申请人地址: HK Hong Kong
- 专利权人: Hong Kong Applied Science and Technology Research Institute Co., Ltd.
- 当前专利权人: Hong Kong Applied Science and Technology Research Institute Co., Ltd.
- 当前专利权人地址: HK Hong Kong
- 代理机构: gPatent LLC
- 代理商 Stuart T. Auvinen
- 主分类号: H02H3/22
- IPC分类号: H02H3/22
摘要:
A power-to-ground clamp transistor provides electrostatic discharge (ESD) protection. A filter capacitor and resistor generate a filter voltage that is buffered by three stages to drive the gate of the clamp transistor. The filter capacitor is about twenty times smaller than in a conventional clamp circuit. Feedback in the circuit keeps the clamp transistor turned on after the R-C time constant of the capacitor and resistor in the filer has elapsed, allowing for a smaller capacitor to turn on the clamp transistor longer. A sub-threshold-conducting transistor in the first stage conducts only a small sub-threshold current, which extends the discharge time of the first stage. The gate of the sub-threshold-conducting transistor is driven by feedback from the second stage. A feed-forward resistor has a high resistance value to slowly raise the voltage of the second stage from the filter voltage, and thus slowly raise the gate of the sub-threshold-conducting transistor.
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