NMOS-Based Feedback Power-Clamp for On-Chip ESD Protection
    1.
    发明申请
    NMOS-Based Feedback Power-Clamp for On-Chip ESD Protection 有权
    用于片上ESD保护的基于NMOS的反馈功率钳位

    公开(公告)号:US20110299202A1

    公开(公告)日:2011-12-08

    申请号:US12795657

    申请日:2010-06-08

    IPC分类号: H02H9/00

    CPC分类号: H02H9/046

    摘要: A power-to-ground clamp transistor provides electrostatic discharge (ESD) protection. A filter capacitor and resistor generate a filter voltage that is buffered by three stages to drive the gate of the clamp transistor. The filter capacitor is about twenty times smaller than in a conventional clamp circuit. Feedback in the circuit keeps the clamp transistor turned on after the R-C time constant of the capacitor and resistor in the filer has elapsed, allowing for a smaller capacitor to turn on the clamp transistor longer. A sub-threshold-conducting transistor in the first stage conducts only a small sub-threshold current, which extends the discharge time of the first stage. The gate of the sub-threshold-conducting transistor is driven by feedback from the second stage. A feed-forward resistor has a high resistance value to slowly raise the voltage of the second stage from the filter voltage, and thus slowly raise the gate of the sub-threshold-conducting transistor.

    摘要翻译: 功率对地钳位晶体管提供静电放电(ESD)保护。 滤波电容器和电阻器产生三级缓冲器来驱动钳位晶体管栅极的滤波电压。 滤波电容器比常规钳位电路小约二十倍。 在电容器的R-C时间常数和滤波器中的电阻已经过去之后,电路中的反馈保持钳位晶体管导通,允许较小的电容器将钳位晶体管导通更长时间。 第一级中的次阈值导通晶体管仅传导较小的次级阈值电流,延长了第一级的放电时间。 子阈值导通晶体管的栅极由来自第二级的反馈驱动。 前馈电阻器具有高电阻值,以从滤波器电压缓慢升高第二级的电压,从而缓慢升高次级阈值导通晶体管的栅极。

    NMOS-based feedback power-clamp for on-chip ESD protection
    2.
    发明授权
    NMOS-based feedback power-clamp for on-chip ESD protection 有权
    基于NMOS的反馈功率钳位,用于片上ESD保护

    公开(公告)号:US08369054B2

    公开(公告)日:2013-02-05

    申请号:US12795657

    申请日:2010-06-08

    IPC分类号: H02H3/22

    CPC分类号: H02H9/046

    摘要: A power-to-ground clamp transistor provides electrostatic discharge (ESD) protection. A filter capacitor and resistor generate a filter voltage that is buffered by three stages to drive the gate of the clamp transistor. The filter capacitor is about twenty times smaller than in a conventional clamp circuit. Feedback in the circuit keeps the clamp transistor turned on after the R-C time constant of the capacitor and resistor in the filer has elapsed, allowing for a smaller capacitor to turn on the clamp transistor longer. A sub-threshold-conducting transistor in the first stage conducts only a small sub-threshold current, which extends the discharge time of the first stage. The gate of the sub-threshold-conducting transistor is driven by feedback from the second stage. A feed-forward resistor has a high resistance value to slowly raise the voltage of the second stage from the filter voltage, and thus slowly raise the gate of the sub-threshold-conducting transistor.

    摘要翻译: 功率对地钳位晶体管提供静电放电(ESD)保护。 滤波电容器和电阻器产生三级缓冲器来驱动钳位晶体管栅极的滤波电压。 滤波电容器比常规钳位电路小约二十倍。 在电容器的R-C时间常数和滤波器中的电阻已经过去之后,电路中的反馈保持钳位晶体管导通,允许较小的电容器将钳位晶体管导通更长时间。 第一级中的次阈值导通晶体管仅传导较小的次级阈值电流,延长了第一级的放电时间。 子阈值导通晶体管的栅极由来自第二级的反馈驱动。 前馈电阻器具有高电阻值,以从滤波器电压缓慢升高第二级的电压,从而缓慢升高次级阈值导通晶体管的栅极。