Invention Grant
- Patent Title: Semiconductor light-emitting device
- Patent Title (中): 半导体发光装置
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Application No.: US12729636Application Date: 2010-03-23
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Publication No.: US08369375B2Publication Date: 2013-02-05
- Inventor: Yasushi Hattori , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
- Applicant: Yasushi Hattori , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-072478 20090324
- Main IPC: H01S3/04
- IPC: H01S3/04 ; H01S5/00 ; H01S3/091

Abstract:
Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package.
Public/Granted literature
- US20100246628A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2010-09-30
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