Invention Grant
- Patent Title: Method for making electron emission apparatus
- Patent Title (中): 电子发射装置的制造方法
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Application No.: US13470482Application Date: 2012-05-14
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Publication No.: US08371892B2Publication Date: 2013-02-12
- Inventor: Yang Wei , Liang Liu , Shou-Shan Fan
- Applicant: Yang Wei , Liang Liu , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Altis Law Group, Inc.
- Priority: CN200810066047 20080201
- Main IPC: H01J9/12
- IPC: H01J9/12 ; H01J9/04

Abstract:
A method for making the electron emission apparatus is provided. In the method, an insulating substrate including a surface is provided. A number of grids are formed on the insulating substrate and defined by a plurality of electrodes. A number of conductive linear structures are fabricated and supported by the electrodes. The number of conductive linear structures are substantially parallel to the surface and each of the grids contains at least one of the conductive linear structures. The conductive linear structures are cut to form a number of electron emitters. Each of the electron emitters has two electron emission ends defining a gap therebetween.
Public/Granted literature
- US20120220182A1 METHOD FOR MAKING ELECTRON EMISSION APPARATUS Public/Granted day:2012-08-30
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