发明授权
- 专利标题： Apparatus temperature control and pattern compensation
- 专利标题（中）： 设备温度控制和模式补偿
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申请号： US11242299申请日： 2005-09-30
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公开(公告)号： US08372203B2公开(公告)日： 2013-02-12
- 发明人: Juan Chacin , Aaron Hunter , Craig Metzner , Roger N. Anderson
- 申请人： Juan Chacin , Aaron Hunter , Craig Metzner , Roger N. Anderson
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Servilla Whitney LLC
- 主分类号： C23C16/48
- IPC分类号： C23C16/48 ; C23C16/46 ; C23C16/458 ; C23F1/00 ; H01L21/306 ; C23C16/06 ; C23C16/22
摘要：
A film formation system 10 includes a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, a susceptor 16 is rotatably disposed in the system 10, and overlaps with a first peripheral member 205 disposed around the sidewalls 18. A radiant heating system 313 is disposed under the susceptor 305 to heat the substrate 19. In another embodiment, the top cover 11 has equally spaced pyrometers 58 for measuring the temperature of the substrate 19 across a number of zones. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 58.
公开/授权文献
- US20070074665A1 Apparatus temperature control and pattern compensation 公开/授权日：2007-04-05
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