发明授权
US08372661B2 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
有权
用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法
- 专利标题： High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
- 专利标题（中）： 用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法
-
申请号： US11981127申请日： 2007-10-31
-
公开(公告)号： US08372661B2公开(公告)日： 2013-02-12
- 发明人: Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
- 申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
- 申请人地址： US CA Milpitas
- 专利权人： MagIC Technologies, Inc.
- 当前专利权人： MagIC Technologies, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.
公开/授权文献
信息查询
IPC分类:
