Invention Grant
US08372680B2 Three-dimensional, ultrasonic transducer arrays, methods of making ultrasonic transducer arrays, and devices including ultrasonic transducer arrays 有权
三维超声波换能器阵列,制造超声波换能器阵列的方法以及包括超声换能器阵列的装置

  • Patent Title: Three-dimensional, ultrasonic transducer arrays, methods of making ultrasonic transducer arrays, and devices including ultrasonic transducer arrays
  • Patent Title (中): 三维超声波换能器阵列,制造超声波换能器阵列的方法以及包括超声换能器阵列的装置
  • Application No.: US11685199
    Application Date: 2007-03-12
  • Publication No.: US08372680B2
    Publication Date: 2013-02-12
  • Inventor: Jingkuang Chen
  • Applicant: Jingkuang Chen
  • Applicant Address: US NM Albuquerque
  • Assignee: STC.UNM
  • Current Assignee: STC.UNM
  • Current Assignee Address: US NM Albuquerque
  • Agency: Schwegman, Lundberg & Woessner, P.A.
  • Main IPC: H01L21/00
  • IPC: H01L21/00 H04R25/00
Three-dimensional, ultrasonic transducer arrays, methods of making ultrasonic transducer arrays, and devices including ultrasonic transducer arrays
Abstract:
Medical imaging devices may comprise an array of ultrasonic transducer elements. Each transducer element may comprise a substrate having a doped surface creating a highly conducting surface layer, a layer of thermal oxide on the substrate, a layer of silicon nitride on the layer of thermal oxide, a layer of silicon dioxide on the layer of silicon nitride, and a layer of conducting thin film on the layer of silicon dioxide. The layers of silicon dioxide and thermal oxide may sandwich the layer of silicon nitride, and the layer of conducting thin film may be separated from the layer of silicon nitride by the layer of silicon dioxide.
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