发明授权
US08372708B2 Device structure and manufacturing method using HDP deposited using deposited source-body implant block
有权
使用沉积源体植入块沉积的HDP的装置结构和制造方法
- 专利标题: Device structure and manufacturing method using HDP deposited using deposited source-body implant block
- 专利标题(中): 使用沉积源体植入块沉积的HDP的装置结构和制造方法
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申请号: US13200869申请日: 2011-10-04
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公开(公告)号: US08372708B2公开(公告)日: 2013-02-12
- 发明人: Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K Lui
- 申请人: Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K Lui
- 代理商 Bo-In Lin
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/425
摘要:
This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.