- 专利标题: Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric
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申请号: US12795962申请日: 2010-06-08
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公开(公告)号: US08373239B2公开(公告)日: 2013-02-12
- 发明人: Shahab Siddiqui , Michael P. Chudzik , Carl J. Radens
- 申请人: Shahab Siddiqui , Michael P. Chudzik , Carl J. Radens
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号: H01L21/70
- IPC分类号: H01L21/70
摘要:
The present disclosure provides a method for forming a semiconductor device that includes forming a replacement gate structure overlying a channel region of a substrate. A mandrel dielectric layer is formed overlying source and drain regions of the substrate. The replacement gate structure is removed to provide an opening exposing the channel region of the substrate. A functional gate structure is formed over the channel region including a work function metal layer. A protective cap structure is formed over the functional gate structure. At least one via is etched through the mandrel dielectric layer selective to the protective cap structure to expose a portion of at least one of the source region and the drain region. A conductive fill is then formed in the vias to provide a contact to the at least one of the source region and the drain region.