- 专利标题： Electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure
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申请号： US13196404申请日： 2011-08-02
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公开(公告)号： US08373267B2公开(公告)日： 2013-02-12
- 发明人: Robert J. Gauthier, Jr. , Junjun Li , Ankit Srivastava
- 申请人： Robert J. Gauthier, Jr. , Junjun Li , Ankit Srivastava
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Anthony Canale
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L23/62
摘要：
A structure includes first and second silicon controlled rectifiers (SCRs) formed in a substrate. The first and the second SCRs each include at least one component commonly shared between the first and the second SCRs.
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