Invention Grant
US08377718B2 Methods of forming a crystalline Pr1-xCaxMnO3 (PCMO) material and methods of forming semiconductor device structures comprising crystalline PCMO
失效
形成结晶Pr1-xCaxMnO3（PCMO）材料的方法和形成包含结晶PCMO的半导体器件结构的方法
- Patent Title: Methods of forming a crystalline Pr1-xCaxMnO3 (PCMO) material and methods of forming semiconductor device structures comprising crystalline PCMO
- Patent Title (中): 形成结晶Pr1-xCaxMnO3（PCMO）材料的方法和形成包含结晶PCMO的半导体器件结构的方法
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Application No.: US12943370Application Date: 2010-11-10
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Publication No.: US08377718B2Publication Date: 2013-02-19
- Inventor: Bhaskar Srinivasan , Gurtej S. Sandhu
- Applicant: Bhaskar Srinivasan , Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method of forming a crystalline Pr1-xCaxMnO3 (PCMO) material includes forming an amorphous PCMO material, crystallizing the amorphous PCMO material, and removing a portion of the crystalline PCMO material. A semiconductor structure including the crystalline PCMO material is also disclosed where the crystalline PCMO material has a thickness of less than about 50 nm. A method of forming a semiconductor device structure is also disclosed.
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