Invention Grant
US08377753B2 Method of fabricating a semiconductor device having a resin with warpage compensated structures
有权
具有具有翘曲补偿结构的树脂的半导体器件的制造方法
- Patent Title: Method of fabricating a semiconductor device having a resin with warpage compensated structures
- Patent Title (中): 具有具有翘曲补偿结构的树脂的半导体器件的制造方法
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Application No.: US13293844Application Date: 2011-11-10
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Publication No.: US08377753B2Publication Date: 2013-02-19
- Inventor: Chai Wei Heng , Wae Chet Yong , Stanley Job Doraisamy , Khai Huat Jeffrey Low , Gerhard Deml
- Applicant: Chai Wei Heng , Wae Chet Yong , Stanley Job Doraisamy , Khai Huat Jeffrey Low , Gerhard Deml
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/29
- IPC: H01L23/29
Abstract:
A semiconductor device including: a die pad, a die on the die pad, and resin encapsulating the die and forming an isolation thickness over the die pad, the resin including a mounting aperture and a major surface configured for mounting to an external device, the major surface having a non warpage compensation portion adjacent the die and a warpage compensation portion in a relatively thermally inactive zone with an approximate discontinuity and/or abrupt change in gradient between the non warpage compensation portion and the warpage compensation portion.
Public/Granted literature
- US20120058606A1 Method of Fabricating A Semiconductor Device Having A Resin With Warpage Compensated Structures Public/Granted day:2012-03-08
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