发明授权
US08377753B2 Method of fabricating a semiconductor device having a resin with warpage compensated structures
有权
具有具有翘曲补偿结构的树脂的半导体器件的制造方法
- 专利标题： Method of fabricating a semiconductor device having a resin with warpage compensated structures
- 专利标题（中）： 具有具有翘曲补偿结构的树脂的半导体器件的制造方法
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申请号： US13293844申请日： 2011-11-10
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公开(公告)号： US08377753B2公开(公告)日： 2013-02-19
- 发明人: Chai Wei Heng , Wae Chet Yong , Stanley Job Doraisamy , Khai Huat Jeffrey Low , Gerhard Deml
- 申请人： Chai Wei Heng , Wae Chet Yong , Stanley Job Doraisamy , Khai Huat Jeffrey Low , Gerhard Deml
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L23/29
- IPC分类号： H01L23/29
摘要：
A semiconductor device including: a die pad, a die on the die pad, and resin encapsulating the die and forming an isolation thickness over the die pad, the resin including a mounting aperture and a major surface configured for mounting to an external device, the major surface having a non warpage compensation portion adjacent the die and a warpage compensation portion in a relatively thermally inactive zone with an approximate discontinuity and/or abrupt change in gradient between the non warpage compensation portion and the warpage compensation portion.
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