摘要:
A semiconductor device including: a die pad, a die on the die pad, and resin encapsulating the die and forming an isolation thickness over the die pad, the resin including a mounting aperture and a major surface configured for mounting to an external device, the major surface having a non warpage compensation portion adjacent the die and a warpage compensation portion in a relatively thermally inactive zone with an approximate discontinuity and/or abrupt change in gradient between the non warpage compensation portion and the warpage compensation portion.
摘要:
A semiconductor device including: a die pad, a die on the die pad, and resin encapsulating the die and forming an isolation thickness over the die pad, the resin including a mounting aperture and a major surface configured for mounting to an external device, the major surface having a non warpage compensation portion adjacent the die and a warpage compensation portion in a relatively thermally inactive zone with an approximate discontinuity and/or abrupt change in gradient between the non warpage compensation portion and the warpage compensation portion.
摘要:
A semiconductor device including: a die pad, a die on the die pad, and resin encapsulating the die and forming an isolation thickness over the die pad, the resin including a mounting aperture and a major surface configured for mounting to an external device, the major surface having a non warpage compensation portion adjacent the die and a warpage compensation portion in a relatively thermally inactive zone with an approximate discontinuity and/or abrupt change in gradient between the non warpage compensation portion and the warpage compensation portion.
摘要:
A semiconductor device including: a die pad, a die on the die pad, and resin encapsulating the die and forming an isolation thickness over the die pad, the resin including a mounting aperture and a major surface configured for mounting to an external device, the major surface having a non warpage compensation portion adjacent the die and a warpage compensation portion in a relatively thermally inactive zone with an approximate discontinuity and/or abrupt change in gradient between the non warpage compensation portion and the warpage compensation portion.
摘要:
A semiconductor device includes a carrier, a semiconductor chip including an active area on a first face and a separate isolation layer applied to a second face, and an adhesion material coupling the isolation layer to the carrier with the second face facing the carrier.
摘要:
A semiconductor device includes a carrier, a semiconductor chip including an active area on a first face and a separate isolation layer applied to a second face, and an adhesion material coupling the isolation layer to the carrier with the second face facing the carrier.
摘要:
Semiconductor module for a Switched-Mode Power Supply comprises at least one semiconductor power switch, a control semiconductor chip and a leadframe comprising a die pad and a plurality of leads disposed on one side of the die pad. The die pad comprises at least two mechanically isolated regions wherein the semiconductor power switch is mounted on a first region of the die pad and the control semiconductor chip is mounted on a second region of the die pad. Plastic housing material electrically isolates the first region and the second region of the die pad and electrically isolates the semiconductor power switch from the control semiconductor chip.
摘要:
Semiconductor module for a Switched-Mode Power Supply comprises at least one semiconductor power switch, a control semiconductor chip and a leadframe comprising a die pad and a plurality of leads disposed on one side of the die pad. The die pad comprises at least two mechanically isolated regions wherein the semiconductor power switch is mounted on a first region of the die pad and the control semiconductor chip is mounted on a second region of the die pad. Plastic housing material electrically isolates the first region and the second region of the die pad and electrically isolates the semiconductor power switch from the control semiconductor chip.