Invention Grant
- Patent Title: Nitride semiconductor light-emitting device and method for manufacturing the same
- Patent Title (中): 氮化物半导体发光器件及其制造方法
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Application No.: US11681478Application Date: 2007-03-02
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Publication No.: US08378380B2Publication Date: 2013-02-19
- Inventor: Tae Yun Kim
- Applicant: Tae Yun Kim
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Eisenschenk
- Priority: KR10-2006-0020741 20060305
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
Provided are a nitride semiconductor light-emitting device and a method for manufacturing the same, capable of improving light emitting efficiency by forming a reflection layer on a lateral side of an LED chip. An embodiment provides a nitride semiconductor light-emitting device includes a light-emitting device chip and a reflection layer. The reflection layer is formed on a lateral side of the light-emitting device chip.
Public/Granted literature
- US20070205429A1 Nitride Semiconductor Light-Emitting Device and Method for Manufacturing the Same Public/Granted day:2007-09-06
Information query
IPC分类:
