公开(公告)号：US08441024B2

公开(公告)日：2013-05-14

申请号：US13453804

申请日：2012-04-23

Applicant: Tae Yun Kim ,  Hyo Kun Son

Inventor： Tae Yun Kim ,  Hyo Kun Son

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L21/02584 ,  H01L33/007 ,  H01L33/04 ,  H01L33/08 ,  H01L33/32 ,  H01L33/325

Abstract: A semiconductor light emitting device includes an active layer; a first nitride semiconductor layer on the active layer; a first delta-doped layer on the first nitride semiconductor layer; a second nitride semiconductor layer on the first delta-doped layer; a second delta-doped layer on the second nitride semiconductor layer; a third nitride semiconductor layer on the second delta-doped layer. The first delta-doped layer, the second nitride semiconductor layer, the second delta-doped layer, and the third nitride semiconductor layer are doped with an n-type dopant.

Abstract translation: 半导体发光器件包括有源层; 在所述有源层上的第一氮化物半导体层; 在第一氮化物半导体层上的第一δ-掺杂层; 在第一δ掺杂层上的第二氮化物半导体层; 在所述第二氮化物半导体层上的第二δ-掺杂层; 在第二δ-掺杂层上的第三氮化物半导体层。 第一掺杂氮化物层，第二氮化物半导体层，第二δ掺杂层和​​第三氮化物半导体层掺杂有n型掺杂剂。

公开(公告)号：US08124796B2

公开(公告)日：2012-02-28

申请号：US12160261

申请日：2006-01-10

Applicant: Byong Sung Kwak ,  Tae Yun Kim ,  Jin Woong Kim ,  Sang Il Lee ,  Ki Ho Koh

Inventor： Byong Sung Kwak ,  Tae Yun Kim ,  Jin Woong Kim ,  Sang Il Lee ,  Ki Ho Koh

IPC: C07D307/02

CPC classification number: C07D307/20

Abstract: Disclosed is a method of preparing 3-hydroxytetrahydrofuran using cyclodehydration. More particularly, this invention relates to a method of preparing 3-hydroxytetrahydrofuran, including subjecting 1,2,4-butanetriol to cyclodehydration under reaction conditions of a reaction temperature of 30˜180° C. and reaction pressure of 5000 psig or less in the presence of a strong acid cation exchange resin catalyst having a sulfonic acid group as an exchange group. According to the method of this invention, 3-hydroxytetrahydrofuran can be economically prepared at higher yield and productivity than when using conventional methods.

Abstract translation: 公开了使用环化脱水制备3-羟基四氢呋喃的方法。 更具体地说，本发明涉及一种制备3-羟基四氢呋喃的方法，包括在反应温度为30〜180℃，反应压力为5000psig以下的反应条件下使1,2,4-丁三醇进行环化脱水 存在具有磺酸基作为交换基团的强酸阳离子交换树脂催化剂。 根据本发明的方法，与使用常规方法相比，3-羟基四氢呋喃可以以更高的产率和生产率经济地制备。

公开(公告)号：US07928454B2

公开(公告)日：2011-04-19

申请号：US12107256

申请日：2008-04-22

Applicant: Tae Yun Kim

Inventor： Tae Yun Kim

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/325 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/12 ,  H01L33/32

Abstract: Disclosed are a light emitting device and a method for manufacturing the same. A light emitting diode comprises a plurality of Un-GaN layers and a plurality of N-type semiconductor layers, an active layer on the N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein at least two of the Un-GaN layers and at least two of the N-type semiconductor layers are alternatively stacked on each other.

Abstract translation: 公开了一种发光器件及其制造方法。 发光二极管包括多个Un-GaN层和多个N型半导体层，N型半导体层上的有源层和有源层上的P型半导体层，其中至少两个 所述Un-GaN层和至少两个所述N型半导体层交替堆叠在一起。

公开(公告)号：US20110076995A1

公开(公告)日：2011-03-31

申请号：US12993577

申请日：2009-05-08

Applicant: Tae Yun Kim

Inventor： Tae Yun Kim

IPC: H04W4/00

CPC classification number: H04L67/36 ,  H04L65/1069 ,  H04L65/1083 ,  H04L65/1096 ,  H04M1/57 ,  H04M1/72547 ,  H04M3/42059 ,  H04M2203/2038 ,  H04W4/16

Abstract: A system and method for providing a multimedia object linked to the mobile communication network is provided. The method includes: (a) the mobile device detecting a ringing signal or call signal of a call; (b) the mobile device extracting a phone number from the detected ringing signal or call signal; (c) the mobile device requesting the expression object server for a multimedia expression object corresponding to the extracted phone number; (d) the expression object server searching a multimedia expression object corresponding to the extracted phone number and transmitting it to the mobile device; and (e) the mobile device displaying the multimedia expression object at least one of the times for originating a call, receiving a call, in the middle of a call and at the end of a call.

Abstract translation: 提供了一种用于提供链接到移动通信网络的多媒体对象的系统和方法。 该方法包括：（a）移动设备检测呼叫的振铃信号或呼叫信号; （b）移动设备从检测到的振铃信号或呼叫信号中提取电话号码; （c）请求表达对象服务器的移动装置对应于所提取的电话号码的多媒体表示对象; （d）表达对象服务器搜索与所提取的电话号码相对应的多媒体表达目标并将其发送到移动设备; 和（e）移动设备在呼叫中间和呼叫结束时，至少发出一个呼叫，接收呼叫，接收呼叫的时间中显示多媒体表达对象。

公开(公告)号：US07823025B2

公开(公告)日：2010-10-26

申请号：US12273667

申请日：2008-11-19

Applicant: Tae Yun Kim

Inventor： Tae Yun Kim

IPC: G06F11/00

CPC classification number: G11C29/12015 ,  G11C29/14

Abstract: Disclosed is a method for testing a memory device with a long-term clock signal by automatically performing precharge only after activation. In this method, a signal for precharging the banks of the memory device is automatically generated only at the falling edge of an external signal when a signal for activating the banks is applied. Accordingly, the present invention ensures a stable test of the memory device, reducing the testing time.

Abstract translation: 公开了一种通过仅在激活后自动执行预充电来测试具有长期时钟信号的存储器件的方法。 在该方法中，当施加用于激活存储体的信号时，仅在外部信号的下降沿才自动产生用于对存储器件的存储体进行预充电的信号。 因此，本发明确保了存储器件的稳定测试，减少了测试时间。

公开(公告)号：US20080315223A1

公开(公告)日：2008-12-25

申请号：US12145152

申请日：2008-06-24

Applicant: Tae Yun Kim ,  Hyo Kun Son

Inventor： Tae Yun Kim ,  Hyo Kun Son

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L33/22

Abstract: Provided is a light emitting device comprising a first conductive type semiconductor layer, an active layer, a semiconductor layer comprising Al, a high-concentration semiconductor layer, a low-mole InxGa1−xN layer, and a second conductive type semiconductor layer. The active layer is on the first conductive type semiconductor layer and emits light. The semiconductor layer comprising Al is on the active layer. The high-concentration semiconductor layer is on the semiconductor layer comprising Al. The low-mole InxGa1−xN layer is on the high-concentration semiconductor layer. The second conductive type semiconductor layer is on the low-mole InxGa1−xN layer.

Abstract translation: 提供了一种发光器件，其包括第一导电类型半导体层，有源层，包含Al的半导体层，高浓度半导体层，低摩尔In x Ga 1-x N层和第二导电类型半导体层。 有源层位于第一导电型半导体层上并发光。 包含Al的半导体层在有源层上。 高浓度半导体层在包含Al的半导体层上。 低摩尔InxGa1-xN层位于高浓度半导体层上。 第二导电型半导体层位于低摩尔In x Ga 1-x N层上。

公开(公告)号：US07149140B2

公开(公告)日：2006-12-12

申请号：US11125687

申请日：2005-05-10

Applicant: Hwang Hur ,  Tae Yun Kim

Inventor： Hwang Hur ,  Tae Yun Kim

IPC: G11C7/00 ,  G11C8/00

CPC classification number: G11C11/40611 ,  G11C11/406 ,  G11C11/40615 ,  G11C11/40618 ,  G11C11/40622

Abstract: In a memory device having an N number of banks, a refresh operation according to a piled refresh scheme is performed during a self-refresh mode to refresh the N number of banks in regular sequence when it is necessary to refresh all of the N number of banks. A refresh operation according to a Partial Array Self Refresh (PASR) scheme is performed during a self-refresh mode when it is necessary to refresh only an i number of banks (where 1

公开(公告)号：US5545880A

公开(公告)日：1996-08-13

申请号：US407197

申请日：1995-03-20

Applicant: Jong Uk Bu ,  Tae Yun Kim

Inventor： Jong Uk Bu ,  Tae Yun Kim

IPC: F24C7/02 ,  H05B6/68

CPC classification number: H05B6/645

Abstract: This invention relates to a method for automatic control of a microwave oven which can make precise cooking control available by classifying the cooking control into cases when cooking is completed below the boiling point of water, such as thawing or warming up, and cases when cooking is completed above the boiling point of water. For types of cooking which are complete without water boiling, the invention sets the initial cooking time period by determining the time it takes for the output voltage of a temperature detection sensor to reach a rise starting point. For types of cooking which include water boiling, the invention sets the initial cooking time period by determining the time it takes for the output voltage of the temperature detection sensor to reach a maximum rise point. The invention then sets an additional time period equivalent to the initial time period multiplied by a cooking constant corresponding to the type of cooking that is desired.

Abstract translation: 微波炉的自动控制方法本发明涉及一种微波炉的自动控制方法，能够通过将烹调控制分类为在煮沸完成低于水的沸点以下的情况下进行精确的烹饪控制，例如解冻或加热，以及烹饪时的情况 完成在沸点以上的水。 对于没有水沸腾而完成的烹饪类型，本发明通过确定温度检测传感器的输出电压达到起始点所需的时间来设定初始烹饪时间段。 对于包括水沸腾的烹饪类型，本发明通过确定温度检测传感器的输出电压达到最大上升点所花费的时间来设定初始烹饪时间段。 然后，本发明设定等于初始时间段的附加时间段乘以与期望的烹饪类型相对应的烹饪常数。

公开(公告)号：US08313435B2

公开(公告)日：2012-11-20

申请号：US12404248

申请日：2009-03-13

Applicant: Tae Yun Kim

Inventor： Tae Yun Kim

IPC: A61B8/00

CPC classification number: G01S15/8981 ,  G01S7/5205 ,  G01S7/52063

Abstract: Examples for filtering clutter signals from receive signals obtained in a Doppler mode in an ultrasound system are disclosed. The signal processing unit processes received echoes to provide 2-dimensional image data of the target object, the 2-dimensional image data being representative of a 2-dimensional image. A region of interest (ROI) is set on the 2-dimensional image of the target object, The signal processing unit obtains a Doppler mode image pixel data corresponding to the ROI. The signal processing unit sets filter cutoff frequencies based on characteristics of the Doppler mode image pixel data and filter the Doppler mode image pixel data with the set filter cutoff frequencies to output filtered pixel data with clutter signals filtered.

Abstract translation: 公开了从超声系统中以多普勒模式获得的接收信号滤波杂波信号的示例。 信号处理单元处理接收回波以提供目标对象的二维图像数据，二维图像数据代表二维图像。 感兴趣区域（ROI）被设置在目标对象的二维图像上。信号处理单元获得对应于ROI的多普勒模式图像像素数据。 信号处理单元基于多普勒模式图像像素数据的特性设置滤波器截止频率，并用设定的滤波器截止频率对多普勒模式图像像素数据进行滤波，以输出滤波后的杂波信号的滤波像素数据。

公开(公告)号：US08258525B2

公开(公告)日：2012-09-04

申请号：US13046520

申请日：2011-03-11

Applicant: Tae Yun Kim

Inventor： Tae Yun Kim

IPC: H01L33/00

CPC classification number: H01L33/325 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/12 ,  H01L33/32

Abstract: A light emitting diode of one embodiment includes a light emitting device having a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on an upper layer of the plurality of N-type semiconductor layers, and a P-type semiconductor layer on the active layer. The first N-type semiconductor layer includes a first Si doped Nitride layer and the second N-type semiconductor layer includes a second Si doped Nitride layer. The first and second N-type semiconductor layers have a Si impurity concentration different from each other.

Abstract translation: 一个实施例的发光二极管包括具有多个N型半导体层的发光器件，所述多个N型半导体层包括在第一N型半导体层上的第一N型半导体层和第二N型半导体层， 多个N型半导体层的上层和有源层上的P型半导体层。 第一N型半导体层包括第一Si掺杂氮化物层，第二N型半导体层包括第二Si掺杂氮化物层。 第一和第二N型半导体层具有彼此不同的Si杂质浓度。