发明授权
- 专利标题: Solid state imaging device
- 专利标题(中): 固态成像装置
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申请号: US13205819申请日: 2011-08-09
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公开(公告)号: US08378400B2公开(公告)日: 2013-02-19
- 发明人: Fujio Masuoka , Nozomu Harada
- 申请人: Fujio Masuoka , Nozomu Harada
- 申请人地址: SG Peninsula Plaza
- 专利权人: Unisantis Electronics Singapore Pte Ltd.
- 当前专利权人: Unisantis Electronics Singapore Pte Ltd.
- 当前专利权人地址: SG Peninsula Plaza
- 代理机构: Brinks Hofer Gilson & Lione
- 主分类号: H01L31/0232
- IPC分类号: H01L31/0232
摘要:
An island-shaped semiconductor constituting a pixel includes a first semiconductor N+-region formed on a substrate, a second semiconductor P-region formed on the region, third semiconductor N-regions formed on upper lateral sides of the region, insulating layers formed on the outer periphery of the regions and lower lateral sides of the region, gate conductive layers formed on the outer periphery of the insulating layers and functioning as gate electrodes forming a channel in a lower area of the region, light-reflection conductive layers formed on the outer periphery of the N regions and a portion of the insulating layers where the gate conductive layers are not formed, a fifth semiconductor P+-region formed on the region and the regions, and a microlens formed on the region and whose focal point is located near the upper surface of the region.
公开/授权文献
- US20120104478A1 SOLID STATE IMAGING DEVICE 公开/授权日:2012-05-03
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