Invention Grant
- Patent Title: Electrostatic discharge protection device comprising a plurality of highly doped areas within a well
- Patent Title (中): 静电放电保护装置，其在井内包括多个高掺杂区域
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Application No.: US12609803Application Date: 2009-10-30
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Publication No.: US08378422B2Publication Date: 2013-02-19
- Inventor: Ming-Song Sheu , Jian-Hsing Lee , Yao-Wu Feng
- Applicant: Ming-Song Sheu , Jian-Hsing Lee , Yao-Wu Feng
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L29/72 ; H01L29/74 ; H01L31/111
Abstract:
Embodiments of the invention relate to an electrostatic discharge (ESD) device and method for forming an ESD device. An embodiment is an ESD protection device comprising a p well disposed in a substrate, an n well disposed in the substrate, a high voltage n well (HVNW) disposed between the p well and the n well in the substrate, a source n+ region disposed in the p well, and a plurality of drain n+ regions disposed in the n well.
Public/Granted literature
- US20100200922A1 Electrostatic Discharge Protection Device and Method Public/Granted day:2010-08-12
Information query
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