发明授权
- 专利标题： Electrostatic discharge protection device comprising a plurality of highly doped areas within a well
- 专利标题（中）： 静电放电保护装置，其在井内包括多个高掺杂区域
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申请号： US12609803申请日： 2009-10-30
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公开(公告)号： US08378422B2公开(公告)日： 2013-02-19
- 发明人: Ming-Song Sheu , Jian-Hsing Lee , Yao-Wu Feng
- 申请人： Ming-Song Sheu , Jian-Hsing Lee , Yao-Wu Feng
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L23/62
- IPC分类号： H01L23/62 ; H01L29/72 ; H01L29/74 ; H01L31/111
摘要：
Embodiments of the invention relate to an electrostatic discharge (ESD) device and method for forming an ESD device. An embodiment is an ESD protection device comprising a p well disposed in a substrate, an n well disposed in the substrate, a high voltage n well (HVNW) disposed between the p well and the n well in the substrate, a source n+ region disposed in the p well, and a plurality of drain n+ regions disposed in the n well.
公开/授权文献
- US20100200922A1 Electrostatic Discharge Protection Device and Method 公开/授权日：2010-08-12
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