发明授权
- 专利标题: Selective floating body SRAM cell
- 专利标题(中): 选择性浮体SRAM单元
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申请号: US13045784申请日: 2011-03-11
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公开(公告)号: US08378429B2公开(公告)日: 2013-02-19
- 发明人: Josephine B. Chang , Leland Chang , Steven J. Koester , Jeffrey W. Sleight
- 申请人: Josephine B. Chang , Leland Chang , Steven J. Koester , Jeffrey W. Sleight
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Harrington & Smith
- 代理商 Louis J. Percello
- 主分类号: H01L21/70
- IPC分类号: H01L21/70
摘要:
A memory cell has N≧16 transistors, in which two are access transistors, at least one pair [say (N-2)/2] are pull-up transistors, and at least another pair [say (N-2)/2] are pull-down transistors. The pull-up and pull-down transistors are all coupled between the two access transistors. Each of the access transistors and the pull-up transistors are the same type, p-type or n-type. Each of the pull-down transistors is the other type, p-type or n-type. The access transistors are floating body devices. The pull-down transistors are non-floating body devices. The pull-up transistors may be floating or non-floating body devices. Various specific implementations and methods of making the memory cell are also detailed.
公开/授权文献
- US20110204445A1 Selective Floating Body SRAM Cell 公开/授权日:2011-08-25