发明授权
- 专利标题： Semiconductor device, semiconductor wafer and manufacturing method of the same
- 专利标题（中）： 半导体器件，半导体晶片及其制造方法
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申请号： US12795950申请日： 2010-06-08
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公开(公告)号： US08378459B2公开(公告)日： 2013-02-19
- 发明人: Yasuhiro Naka , Naotaka Tanaka , Toshihide Uematsu , Chuichi Miyazaki , Kazunari Suzuki , Yasuyuki Nakajima , Yoshiyuki Abe , Kenji Kohzu , Kosuke Kitaichi , Shinya Ogane
- 申请人： Yasuhiro Naka , Naotaka Tanaka , Toshihide Uematsu , Chuichi Miyazaki , Kazunari Suzuki , Yasuyuki Nakajima , Yoshiyuki Abe , Kenji Kohzu , Kosuke Kitaichi , Shinya Ogane
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Brundidge & Stanger, P.C.
- 优先权： JP2009-137893 20090609
- 主分类号： H01L23/544
- IPC分类号： H01L23/544
摘要：
In a state where an adhesive tape is attached onto a main surface of a semiconductor wafer, a trench is formed in a rear surface of the semiconductor wafer. For forming the trench in the rear surface of the semiconductor wafer, after coating a resist film on the rear surface of the semiconductor wafer, the resist film is patterned by using the photolithography technology. The patterning of the resist film is performed so as not to leave the resist film in the region where the trench is to be formed. Then, the trench is formed in a predetermined region of the semiconductor wafer by the dry etching technology using the patterned resist film as a mask. Specifically, the trench is formed in the region near the dicing line.
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