Invention Grant
- Patent Title: Metal oxide metal capacitor with slot vias
- Patent Title (中): 带通孔的金属氧化物金属电容器
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Application No.: US12768001Application Date: 2010-04-27
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Publication No.: US08379365B2Publication Date: 2013-02-19
- Inventor: Chin-Shan Wang , Jian-Hong Lin , Chien-Jung Wang
- Applicant: Chin-Shan Wang , Jian-Hong Lin , Chien-Jung Wang
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01G4/005
- IPC: H01G4/005 ; H01G4/06

Abstract:
A capacitor includes the first electrode including the first conductive lines and vias. The first conductive lines on the same layer are parallel to each other and connected to a first periphery conductive line. The first conductor lines are aligned in adjacent layers and are coupled to each other by the vias. The capacitor further includes a second electrode aligned opposite to the first electrode including second conductive lines and vias. The second conductive lines on the same layer are parallel to each other and connected to a second periphery conductive line. The second conductor lines are aligned in adjacent layers and are coupled to each other by the vias. The capacitor further includes oxide layers formed between the first electrode and the second electrode. The vias have rectangular (slot) shapes on a layout. In one embodiment, the conductive lines and vias are metal, e.g. copper, aluminum, or tungsten.
Public/Granted literature
- US20100271753A1 METAL OXIDE METAL CAPACITOR WITH SLOT VIAS Public/Granted day:2010-10-28
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