Invention Grant
US08379414B2 Power transistor chip with built-in enhancement mode metal oxide semiconductor field effect transistor and application circuit thereof
失效
功率晶体管芯片,内置增强型金属氧化物半导体场效应晶体管及其应用电路
- Patent Title: Power transistor chip with built-in enhancement mode metal oxide semiconductor field effect transistor and application circuit thereof
- Patent Title (中): 功率晶体管芯片,内置增强型金属氧化物半导体场效应晶体管及其应用电路
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Application No.: US12701477Application Date: 2010-02-05
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Publication No.: US08379414B2Publication Date: 2013-02-19
- Inventor: Chih-Feng Huang , Kuang-Ming Chang
- Applicant: Chih-Feng Huang , Kuang-Ming Chang
- Applicant Address: unknown Chupei
- Assignee: Richtek Technology Corp.
- Current Assignee: Richtek Technology Corp.
- Current Assignee Address: unknown Chupei
- Priority: TW98113946A 20090427
- Main IPC: H02M3/335
- IPC: H02M3/335

Abstract:
A power transistor chip with built-in enhancement mode metal oxide semiconductor field effect transistor and application circuit thereof provides an enhancement mode metal oxide semiconductor field effect transistor in association with two series connected resistors to act as a start-up circuit for the AC/DC voltage converter. The start-up circuit can be shut off after the pulse width modulation circuit of the AC/DC voltage converter circuit works normally and still capable of offering a function of brown out detection for the pulse width modulation circuit as well. Besides, the enhancement mode metal oxide semiconductor field effect transistor is built in the power transistor chip without additional masks and processes during the power transistor chip being fabricated such that the entire manufacturing process is simplified substantively with the economical production cost.
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