Invention Grant
- Patent Title: Memory with interleaved read and redundant columns
- Patent Title (中): 具有交错读和冗余列的内存
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Application No.: US13308405Application Date: 2011-11-30
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Publication No.: US08379448B2Publication Date: 2013-02-19
- Inventor: Jin-Man Han , Aaron Yip
- Applicant: Jin-Man Han , Aaron Yip
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C16/06 ; G11C7/00 ; G11C7/10 ; G11C8/00

Abstract:
Apparatus and methods are disclosed, such as those involving a flash memory device. One such apparatus includes a memory block including a plurality of columns. Each of the columns includes a bit line and a plurality of memory cells on the bit line. The plurality of columns include a plurality of groups of regular columns and a plurality of groups of redundant columns. The apparatus also includes a plurality of data latches. Each of the data latches is configured to store data read from a respective one group of regular columns. The apparatus further includes a plurality of redundant data latches. Each of the redundant data latches is configured to store data read from a respective one group of redundant columns. The apparatus also includes a multiplexer configured to selectively output data from the plurality of data latches and the plurality of redundant data latches.
Public/Granted literature
- US20120069659A1 MEMORY WITH INTERLEAVED READ AND REDUNDANT COLUMNS Public/Granted day:2012-03-22
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