Invention Grant
US08379460B2 Trim circuit and semiconductor memory device comprising same 有权
修剪电路和包括其的半导体存储器件

Trim circuit and semiconductor memory device comprising same
Abstract:
A trim circuit comprises a trim code storage unit, a global latch unit and a local latch unit. The trim code storage unit stores a plurality of trim codes and outputs a sensing code in response to an address signal. The global latch unit latches a calibrated code or the sensing code to generate a global output signal. The calibrated code is generated by performing a calibration on the sensing code. The local latch unit repeatedly latches the global output signal in response to the address signal to generate a plurality of trim output signals.
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