发明授权
- 专利标题: Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof
- 专利标题(中): 显示装置及其制造方法以及半导体装置及其制造方法
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申请号: US13440648申请日: 2012-04-05
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公开(公告)号: US08383468B2公开(公告)日: 2013-02-26
- 发明人: Iwao Yagi
- 申请人: Iwao Yagi
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: SNR Denton US LLP
- 优先权: JP2008-157489 20080617
- 主分类号: H01L21/48
- IPC分类号: H01L21/48 ; H01L21/00 ; H01L21/4763
摘要:
A method of forming a display device including source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. Source/drain electrodes of a thin-film transistor are formed on the substrate, while a pixel electrode is connected to the source/drain electrodes. The insulating partition wall layer is formed on the substrate, where the partition wall layer has a first opening extending to between the source electrode and the drain electrode. Furthermore, a channel-region semiconductor layer is formed by depositing a semiconductor layer over the partition wall layer. The channel-region semiconductor layer is on the bottom of the first opening to be separate from a upper part of the partition wall layer.
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