Invention Grant
US08383506B1 Method of forming a compliant monopolar micro device transfer head with silicon electrode 有权
用硅电极形成柔性单极微器件转移头的方法

Method of forming a compliant monopolar micro device transfer head with silicon electrode
Abstract:
A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.
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