发明授权
- 专利标题： Micro pattern forming method
- 专利标题（中）： 微型成型方法
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申请号： US13154728申请日： 2011-06-07
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公开(公告)号： US08383522B2公开(公告)日： 2013-02-26
- 发明人: Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
- 申请人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Pearne & Gordon LLP
- 优先权： JP2007-153184 20070608
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
There is provided a micro pattern forming method including forming a thin film on a substrate; forming a film serving as a mask when processing the thin film; processing the film serving as a mask into a pattern including lines having a preset pitch; trimming the pattern including the lines; and forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species. Here, the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film.
公开/授权文献
- US20110237082A1 MICRO PATTERN FORMING METHOD 公开/授权日：2011-09-29