Invention Grant
US08384125B2 Structure and method for a silicon controlled rectifier (SCR) structure for SOI technology
有权
用于SOI技术的可控硅整流器（SCR）结构的结构和方法
- Patent Title: Structure and method for a silicon controlled rectifier (SCR) structure for SOI technology
- Patent Title (中): 用于SOI技术的可控硅整流器（SCR）结构的结构和方法
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Application No.: US13035549Application Date: 2011-02-25
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Publication No.: US08384125B2Publication Date: 2013-02-26
- Inventor: Robert J. Gauthier, Jr. , Junjun Li , Souvick Mitra
- Applicant: Robert J. Gauthier, Jr. , Junjun Li , Souvick Mitra
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a P+-N body diode and an N+-P body diode. The P+-N body diode and the N+-P body diode are laterally integrated.
Public/Granted literature
- US20110147794A1 STRUCTURE AND METHOD FOR A SILICON CONTROLLED RECTIFIER (SCR) STRUCTURE FOR SOI TECHNOLOGY Public/Granted day:2011-06-23
Information query
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