Invention Grant
- Patent Title: High ohmic integrated resistor with improved linearity
- Patent Title (中): 高欧姆集成电阻,线性度提高
-
Application No.: US11746949Application Date: 2007-05-10
-
Publication No.: US08384157B2Publication Date: 2013-02-26
- Inventor: Sergio Morini
- Applicant: Sergio Morini
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L27/12
- IPC: H01L27/12

Abstract:
An integrated circuit that includes a resistor module with improved linearity is disclosed. The resistor module includes a diffused resistor body of a first conductivity type; a first terminal and a second terminal, each making direct electrical contact with the diffused resistor body; a doped well of a second conductivity type substantially surrounding the diffused resistor body on all but one major surface of the diffused resistor body, the doped well having contact regions; a first amplifier connected to the first terminal and to one contact region of the doped well; and a second amplifier connected to the second terminal and to another contact region of the well, such that the first amplifier and the second amplifier are connected for power supply only to the first terminal and second terminal, respectively. The first and second amplifiers may be unity gain buffer amplifiers or inverting opamps.
Public/Granted literature
- US20080278213A1 HIGH OHMIC INTEGRATED RESISTOR WITH IMPROVED LINEARITY Public/Granted day:2008-11-13
Information query
IPC分类: