发明授权
- 专利标题： Laterally diffused metal oxide semiconductor device
- 专利标题（中）： 横向扩散金属氧化物半导体器件
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申请号： US12882899申请日： 2010-09-15
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公开(公告)号： US08384184B2公开(公告)日： 2013-02-26
- 发明人: Tahir A. Khan , Bernhard H. Grote , Vishnu K. Khemka , Ronghua Zhu
- 申请人： Tahir A. Khan , Bernhard H. Grote , Vishnu K. Khemka , Ronghua Zhu
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Ingrassia Fisher & Lorenz, P.C.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device and a related fabrication process are presented here. The device includes a support substrate, a buried oxide layer overlying the support substrate, a first semiconductor region located above the buried oxide layer and having a first conductivity type. The device also includes second, third, fourth, and fifth semiconductor regions. The second semiconductor region is located above the first semiconductor region, and it has a second conductivity type. The third semiconductor region is located above the second semiconductor region, and it has the first conductivity type. The fourth semiconductor region is located above the third semiconductor region, and it has the second conductivity type. The fifth semiconductor region extends through the fourth semiconductor region and the third semiconductor region to the second semiconductor region, and it has the second conductivity type.
公开/授权文献
- US20120061758A1 SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD 公开/授权日：2012-03-15
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