Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12801303Application Date: 2010-06-02
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Publication No.: US08384230B2Publication Date: 2013-02-26
- Inventor: Hidenori Egawa
- Applicant: Hidenori Egawa
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-166975 20090715
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device includes a wiring board that has a conductive pattern formed on at least one principal surface, and an IC chip that is mounted on the wiring board. The IC chip includes a plurality of electrodes to make conductor connection with the wiring board. The conductive pattern includes a lead line pattern and a heat dissipation pattern. The lead line pattern is connected with at least one of the plurality of electrodes through a conductor. The heat dissipation pattern is physically spaced from the IC chip and the lead line pattern and has a larger surface area than the lead line pattern. Further, the lead line pattern and the heat dissipation pattern are placed opposite to each other with a gap therebetween, and their opposite parts respectively have interdigitated shapes and are arranged with the respective interdigitated shapes engaging with each other with the gap therebetween.
Public/Granted literature
- US20110012265A1 Semiconductor device Public/Granted day:2011-01-20
Information query
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