Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13417548Application Date: 2012-03-12
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Publication No.: US08384466B2Publication Date: 2013-02-26
- Inventor: Toshiaki Kawasaki , Yasuhiro Agata , Masanori Shirahama , Toshihiro Kougami , Katsuya Arai
- Applicant: Toshiaki Kawasaki , Yasuhiro Agata , Masanori Shirahama , Toshihiro Kougami , Katsuya Arai
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Panasonic Patent Center
- Priority: JP2009-248930 20091029
- Main IPC: H01H37/76
- IPC: H01H37/76
Abstract:
A semiconductor device includes an electric fuse circuit and a program protective circuit. The electric fuse circuit includes a fuse element and a transistor connected together in series and placed between a program power supply and a grounding, and controlling sections. The program protective circuit is placed in parallel with the electric fuse circuit and between the program power supply and the grounding. When a surge voltage is applied between the program power supply and the grounding, the foregoing structure allows a part of a surge electric current can flow through the program protective circuit.
Public/Granted literature
- US20120169402A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-07-05
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