Invention Grant
- Patent Title: Strain bars in stressed layers of MOS devices
- Patent Title (中): 应变棒在MOS器件的应力层
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Application No.: US13089765Application Date: 2011-04-19
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Publication No.: US08389316B2Publication Date: 2013-03-05
- Inventor: Yen-Sen Wang , Chung-Te Lin , Min Cao , Sheng-Jier Yang
- Applicant: Yen-Sen Wang , Chung-Te Lin , Min Cao , Sheng-Jier Yang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A semiconductor structure includes an active region; a gate strip overlying the active region; and a metal-oxide-semiconductor (MOS) device. A portion of the gate strip forms a gate of the MOS device. A portion of the active region forms a source/drain region of the MOS device. The semiconductor structure further includes a stressor region over the MOS device; and a stressor-free region inside the stressor region and outside the region over the active region.
Public/Granted literature
- US20110195554A1 Strain Bars in Stressed Layers of MOS Devices Public/Granted day:2011-08-11
Information query
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