Invention Grant
US08389348B2 Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics
有权
在Si衬底上形成SiC晶体以允许GaN和Si电子器件集成的机理
- Patent Title: Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics
- Patent Title (中): 在Si衬底上形成SiC晶体以允许GaN和Si电子器件集成的机理
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Application No.: US12881505Application Date: 2010-09-14
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Publication No.: US08389348B2Publication Date: 2013-03-05
- Inventor: Kong-Beng Thei , Jiun-Lei Jerry Yu , Chun Lin Tsai , Hsiao-Chin Tuan , Alex Kalnitsky
- Applicant: Kong-Beng Thei , Jiun-Lei Jerry Yu , Chun Lin Tsai , Hsiao-Chin Tuan , Alex Kalnitsky
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
The mechanisms of forming SiC crystalline regions on Si substrate described above enable formation and integration of GaN-based devices and Si-based devices on a same substrate. The SiC crystalline regions are formed by implanting carbon into regions of Si substrate and then annealing the substrate. An implant-stop layer is used to cover the Si device regions during formation of the SiC crystalline regions.
Public/Granted literature
- US20120061681A1 MECHANISM OF FORMING SIC CRYSTALLINE ON SI SUBSTRATES TO ALLOW INTEGRATION OF GAN AND SI ELECTRONICS Public/Granted day:2012-03-15
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