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发明授权
US08389348B2 Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics 有权
在Si衬底上形成SiC晶体以允许GaN和Si电子器件集成的机理

Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics
摘要：
The mechanisms of forming SiC crystalline regions on Si substrate described above enable formation and integration of GaN-based devices and Si-based devices on a same substrate. The SiC crystalline regions are formed by implanting carbon into regions of Si substrate and then annealing the substrate. An implant-stop layer is used to cover the Si device regions during formation of the SiC crystalline regions.
摘要（中）：

在上述Si衬底上形成SiC结晶区的机理能够在同一衬底上形成GaN和GaN基器件的集成。 通过将碳注入到Si衬底的区域中，然后使衬底退火来形成SiC晶体区域。 在形成SiC晶体区域期间，使用注入停止层来覆盖Si器件区域。

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