发明授权
- 专利标题: Nonvolatile semiconductor memory device and manufacturing method thereof
- 专利标题(中): 非易失性半导体存储器件及其制造方法
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申请号: US13485203申请日: 2012-05-31
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公开(公告)号: US08389990B2公开(公告)日: 2013-03-05
- 发明人: Takumi Mikawa , Yoshio Kawashima , Ryoko Miyanaga
- 申请人: Takumi Mikawa , Yoshio Kawashima , Ryoko Miyanaga
- 申请人地址: JP Osaka
- 专利权人: Panasonic Corporation
- 当前专利权人: Panasonic Corporation
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2007-281181 20071030
- 主分类号: H01L29/10
- IPC分类号: H01L29/10
摘要:
A nonvolatile semiconductor memory device of the present invention includes a substrate (1), first wires (2), memory cells each including a resistance variable element (5) and a portion of a diode element (6), second wires (11) which respectively cross the first wires (2) to be perpendicular to the first wires (2) and each of which contains a remaining portion of the diode element (6), and upper wires (13) formed via an interlayer insulating layer (12), respectively, and the first wires (2) are connected to the upper wires (13) via first contacts (14), respectively, and the second wires (11) are connected to the upper wires (13) via second contacts (15), respectively.