发明授权
- 专利标题： Polysilicon thin film transistor having trench type copper bottom gate structure and method of making the same
- 专利标题（中）： 具有沟槽型铜底栅结构的多晶硅薄膜晶体管及其制造方法
-
申请号： US13182625申请日： 2011-07-14
-
公开(公告)号： US08389994B2公开(公告)日： 2013-03-05
- 发明人: Seung Ki Joo
- 申请人： Seung Ki Joo
- 代理机构： Cantor Colburn LLP
- 优先权： KR10-2010-0133127 20101223
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L31/036 ; H01L21/00
摘要：
Provided is a polysilicon thin film transistor having a trench type bottom gate structure using copper and a method of making the same. The polysilicon thin film transistor includes: a transparent insulation substrate; a seed pattern that is formed in a pattern corresponding to that of a gate electrode on the transparent insulation substrate, and that is used to form the gate electrode; a trench type guide portion having a trench type contact window in which an upper portion of the seed pattern is exposed; the gate electrode that is formed by electrodepositing copper on a trench of the exposed seed pattern; a gate insulation film formed on the upper portions of the gate electrode and the trench type guide portion, respectively; and a polysilicon layer in which a channel region, a source region and a drain region are formed on the upper portion of the gate insulation film.
公开/授权文献
信息查询
IPC分类:
