发明授权
- 专利标题： Semiconductor memory element and semiconductor memory device
- 专利标题（中）： 半导体存储元件和半导体存储器件
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申请号： US12880748申请日： 2010-09-13
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公开(公告)号： US08390054B2公开(公告)日： 2013-03-05
- 发明人: Tsunehiro Ino , Daisuke Matsushita , Yasushi Nakasaki , Masao Shingu
- 申请人： Tsunehiro Ino , Daisuke Matsushita , Yasushi Nakasaki , Masao Shingu
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JPP2010-084332 20100331
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/792
摘要：
According to one embodiment, a semiconductor memory element includes a semiconductor layer, a tunnel insulator provided on the semiconductor layer, a charge accumulation film provided on the tunnel insulator having a film thickness of 0.9 nm or more and 2.8 nm or less and the charge accumulation film containing cubic HfO2 particles, a block insulator provided on the charge accumulation film, and a control electrode provided on the block insulator.
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