发明授权
- 专利标题： Semiconductor nanowire memory device
- 专利标题（中）： 半导体纳米线存储器件
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申请号： US12881593申请日： 2010-09-14
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公开(公告)号： US08390066B2公开(公告)日： 2013-03-05
- 发明人: Hideyuki Nishizawa , Satoshi Itoh
- 申请人： Hideyuki Nishizawa , Satoshi Itoh
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2010-057549 20100315
- 主分类号： H01L27/11
- IPC分类号： H01L27/11 ; H01L27/12
摘要：
According to an embodiment, a semiconductor memory device capable of stably operating even when an element is shrunk is provided. The semiconductor memory device of the embodiment includes: first and second diodes serially connected between power sources of two different potentials, formed by nanowires, and exhibiting negative differential resistances; and a select transistor connected between the first diode and the second diode. The nanowires are preferably silicon nanowires. The thickness of the silicon nanowires is preferably 8 nm or less.
公开/授权文献
- US20110220876A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2011-09-15
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