发明授权
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12420363申请日: 2009-04-08
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公开(公告)号: US08390076B2公开(公告)日: 2013-03-05
- 发明人: Atsuhiro Suzuki , Hiroshi Shimode , Takeshi Shimane , Norihisa Arai , Minori Kajimoto
- 申请人: Atsuhiro Suzuki , Hiroshi Shimode , Takeshi Shimane , Norihisa Arai , Minori Kajimoto
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2008-101379 20080409
- 主分类号: H01L21/70
- IPC分类号: H01L21/70
摘要:
According to an aspect of the present invention, there is provided a semiconductor device including: a semiconductor substrate; active areas with island-like shapes formed on the semiconductor substrate; an element isolation area surrounding the active areas and including an element isolation groove formed on the semiconductor substrate and an element isolation film embedded into the element isolation groove; gate insulating films each formed on corresponding one of the active areas and having a first end portion that overhangs from the corresponding active area onto the element isolation area at one side and a second end portion that overhangs from the corresponding active area onto the element isolation area at the other side, wherein an overhang of the first end portion has a different length from a length of an overhang of the second end portion.
公开/授权文献
- US20090256190A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2009-10-15