Invention Grant
- Patent Title: Method for fabrication of a semiconductor element and structure thereof
- Patent Title (中): 半导体元件的制造方法及其结构
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Application No.: US12782448Application Date: 2010-05-18
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Publication No.: US08390326B2Publication Date: 2013-03-05
- Inventor: Zvi Or-Bach , James M. Tour , Jun Yao , Brian Cronquist
- Applicant: Zvi Or-Bach , James M. Tour , Jun Yao , Brian Cronquist
- Applicant Address: US TX Houston
- Assignee: William Marsh Rice University
- Current Assignee: William Marsh Rice University
- Current Assignee Address: US TX Houston
- Agency: Winstead PC
- Main IPC: H03K19/177
- IPC: H03K19/177

Abstract:
Re-programmable antifuses and structures utilizing re-programmable antifuses are presented herein. Such structures include a configurable interconnect circuit having at least one re-programmable antifuse, wherein the at least one re-programmable antifuse is configured to be programmed to conduct by applying a first voltage across it and is configured to be re-programmed not to conduct by applying second voltage across it, wherein the second voltage is higher than the first voltage. Additionally, the re-programmable antifuses may be configured to a permanently conductive state by applying an even higher voltage across it.
Public/Granted literature
- US20100289524A1 Method for Fabrication of a Semiconductor Element and Structure Thereof Public/Granted day:2010-11-18
Information query
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