Invention Grant
- Patent Title: Memory word-line driver having reduced power consumption
- Patent Title (中): 存储器字线驱动器具有降低的功耗
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Application No.: US12786791Application Date: 2010-05-25
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Publication No.: US08391097B2Publication Date: 2013-03-05
- Inventor: Wei Min Chan , Yen-Huei Chen , Chen-Lin Yang , Hsiu-Hui Yang , Shao-Yu Chou
- Applicant: Wei Min Chan , Yen-Huei Chen , Chen-Lin Yang , Hsiu-Hui Yang , Shao-Yu Chou
- Applicant Address: TW Hsin-chu
- Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.
- Current Assignee Address: TW Hsin-chu
- Agency: Duane Morris LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C7/00

Abstract:
A word-line driving circuit for driving a word-line in a memory array includes a NAND circuit having a pair of address inputs and an output, an output inverter circuit having an inverter power supply node, an input coupled to the output of the NAND circuit and an output for providing a word line signal, a power gate coupled between a first power supply node and the inverter power supply node, and a control circuit coupled to the power gate. The control circuit controls the power gate to place the word line driver circuit in active or standby mode in response to the output of the NAND circuit.
Public/Granted literature
- US20110292754A1 MEMORY WORD-LINE DRIVER HAVING REDUCED POWER CONSUMPTION Public/Granted day:2011-12-01
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