发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US12885941申请日: 2010-09-20
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公开(公告)号: US08392476B2公开(公告)日: 2013-03-05
- 发明人: Shigehiro Asano , Kenichiro Yoshii , Kazuhiro Fukutomi , Shinichi Kanno
- 申请人: Shigehiro Asano , Kenichiro Yoshii , Kazuhiro Fukutomi , Shinichi Kanno
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2010-031797 20100216; JP2010-206116 20100914
- 主分类号: G06F17/30
- IPC分类号: G06F17/30
摘要:
According to one embodiment, a semiconductor memory device performs writing of data to a semiconductor memory element in response to a request to write the data with a specified logical block address from a host and performs writing of valid data to the semiconductor memory element for compaction according to a log-structured method. The semiconductor memory device adjusts a frequency of the writing response to a request from the host and a frequency of the writing for compaction according to a predetermined ratio.
公开/授权文献
- US20110202578A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2011-08-18
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