Invention Grant
- Patent Title: Pressure sensor with resistance strain gages
- Patent Title (中): 带电阻应变计的压力传感器
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Application No.: US12279396Application Date: 2007-01-26
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Publication No.: US08393223B2Publication Date: 2013-03-12
- Inventor: Gilles Delapierre , Hubert Grange , Patrice Rey
- Applicant: Gilles Delapierre , Hubert Grange , Patrice Rey
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Lowe Hauptman Ham & Berner, LLP
- Priority: FR0601652 20060224
- International Application: PCT/EP2007/050766 WO 20070126
- International Announcement: WO2007/096225 WO 20070830
- Main IPC: G01L9/04
- IPC: G01L9/04

Abstract:
A pressure sensor micromachined by using microelectronics technologies includes a cavity hermetically sealed on one side by a silicon substrate and on the other side by a diaphragm that is configured to be formed under the effect of the pressure outside the cavity. The sensor includes at least one resistance strain gage fastened to the diaphragm and has resistance that varies as a function of the deformation of the diaphragm. The diaphragm is fastened to the resistance strain gages. The gages are located inside the sealed cavity. The diaphragm has an insulting layer deposited on a sacrificial layer and may cover integrated measurement circuits in the silicon substrate.
Public/Granted literature
- US20100031752A1 PRESSURE SENSOR WITH RESISTANCE STRAIN GAGES Public/Granted day:2010-02-11
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