- 专利标题: Methods of forming graphene-containing switches
-
申请号: US13191192申请日: 2011-07-26
-
公开(公告)号: US08394682B2公开(公告)日: 2013-03-12
- 发明人: Gurtej S. Sandhu
- 申请人: Gurtej S. Sandhu
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wells St. John P.S.
- 主分类号: H01L21/82
- IPC分类号: H01L21/82
摘要:
Some embodiments include methods of forming graphene-containing switches. A bottom electrode may be formed over a base, and a first electrically conductive structure may be formed to extend upwardly from the bottom electrode. Dielectric material may be formed along a sidewall of the first electrically conductive structure, while leaving a portion of the bottom electrode exposed. A graphene structure may be formed to be electrically coupled with the exposed portion of the bottom electrode. A second electrically conductive structure may be formed on an opposing side of the graphene structure from the first electrically conductive structure. A top electrode may be formed over the graphene structure and electrically coupled with the second electrically conductive structure. The first and second electrically conductive structures may be configured to provide an electric field across the graphene structure.
公开/授权文献
- US20130029460A1 METHODS OF FORMING GRAPHENE-CONTAINING SWITCHES 公开/授权日:2013-01-31
信息查询
IPC分类: