Semiconductor devices having stressor regions and related fabrication methods

Invention Grant

US08394691B2 Semiconductor devices having stressor regions and related fabrication methods 有权

Title translation: 具有应力区域和相关制造方法的半导体器件

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Patent Title: Semiconductor devices having stressor regions and related fabrication methods
Patent Title (中): 具有应力区域和相关制造方法的半导体器件
Application No.: US12814346

Application Date: 2010-06-11
Publication No.: US08394691B2

Publication Date: 2013-03-12
Inventor: Bin Yang , Man Fai Ng
Applicant: Bin Yang , Man Fai Ng
Applicant Address: KY Grand Cayman
Assignee: Globalfoundries, Inc.
Current Assignee: Globalfoundries, Inc.
Current Assignee Address: KY Grand Cayman
Agency: Ingrassia Fisher & Lorenz, P.C.
Main IPC: H01L21/8238
IPC: H01L21/8238

Semiconductor devices having stressor regions and related fabrication methods

Abstract:

Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a gate structure overlying a region of semiconductor material, wherein the width of the gate structure is aligned with a crystal direction of the semiconductor material. The method continues by forming recesses about the gate structure and forming a stress-inducing semiconductor material in the recesses.

Abstract(Chinese):

提供了半导体器件结构和相关制造方法的装置。制造半导体器件结构的一种方法包括形成覆盖半导体材料区域的栅极结构，其中栅极结构的宽度与半导体材料的<100>晶体方向对齐。该方法通过在栅极结构周围形成凹槽并在凹部中形成应力诱导半导体材料来继续。

Public/Granted literature

US20110303954A1 SEMICONDUCTOR DEVICES HAVING STRESSOR REGIONS AND RELATED FABRICATION METHODS Public/Granted day:2011-12-15

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS