发明授权
- 专利标题： Method and system for manufacturing copper-based capacitor
- 专利标题（中）： 制造铜基电容器的方法和系统
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申请号： US12950973申请日： 2010-11-19
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公开(公告)号： US08395200B2公开(公告)日： 2013-03-12
- 发明人: Zhen Chen , Yung Feng Lin , Lin Huang
- 申请人： Zhen Chen , Yung Feng Lin , Lin Huang
- 申请人地址： CN Shanghai
- 专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人地址： CN Shanghai
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 优先权： CN200910199228 20091120
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L29/94 ; H01L21/20
摘要：
A method for manufacturing a capacitor on an integrated circuit includes providing an inter-metal dielectric layer on a substrate, a bottom layer having a first and second portions, a first insulating layer having via plug openings on the bottom layer, and via plugs disposed in the via plug openings. The via plugs include a first and second via plugs and are electrically coupled to the first portion of the bottom layer. The method further includes providing a capacitor layer having a first barrier metal layer coupled to the first via plug. The capacitor layer also has a capacitor dielectric layer overlying the first barrier metal layer and a second barrier metal overlying the capacitor dielectric layer. The method further includes defining a first and second capacitor layer portions. The first capacitor layer portion has two opposite sides and spacers disposed on their surface.
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