Invention Grant
- Patent Title: Through silicon via guard ring
- Patent Title (中): 通过保护环硅
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Application No.: US12918579Application Date: 2009-11-25
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Publication No.: US08395241B2Publication Date: 2013-03-12
- Inventor: Cheng Yang , Jiamin Qian , Hai Wu
- Applicant: Cheng Yang , Jiamin Qian , Hai Wu
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- International Application: PCT/CN2009/001315 WO 20091125
- International Announcement: WO2011/063547 WO 20110603
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/48

Abstract:
The present disclosure relates to forming a plurality of through silicon vias guard rings proximate the scribes streets of a microelectronic device wafer. The microelectronic device wafer includes a substrate wherein the through silicon via guard ring is fabricated by forming vias extending completely through the substrate. The through silicon via guard rings act as crack arresters, such that defects caused by cracks resulting from the dicing of the microelectronic wafer are substantially reduced or eliminated.
Public/Granted literature
- US20120228777A1 THROUGH SILICON VIA GUARD RING Public/Granted day:2012-09-13
Information query
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