发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13421933申请日: 2012-03-16
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公开(公告)号: US08395745B2公开(公告)日: 2013-03-12
- 发明人: Saishi Fujikawa , Kunio Hosoya
- 申请人: Saishi Fujikawa , Kunio Hosoya
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权: JP2006-266287 20060929
- 主分类号: G02F1/1339
- IPC分类号: G02F1/1339
摘要:
When a columnar spacer is provided in a region overlapping with a TFT, there is a concern that pressure will be applied when attaching a pair of substrates to each other, which may result in the TFT being adversely affected and a crack forming. A dummy layer is formed of an inorganic material below a columnar spacer which is formed in a position overlapping with the TFT. The dummy layer is located in the position overlapping with the TFT, so that pressure applied to the TFT in a step of attaching the pair of substrates is distributed and relieved. The dummy layer is preferably formed of the same material as a pixel electrode so that it is formed without an increase in the number of processing steps.
公开/授权文献
- US20120176559A1 SEMICONDUCTOR DEVICE 公开/授权日:2012-07-12
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