Invention Grant
US08395953B2 Bit-line sense amplifier, semiconductor memory device having the same, and method of testing bit-line micro-bridge defect
有权
位线读出放大器，具有相同的半导体存储器件以及测试位线微桥缺陷的方法
- Patent Title: Bit-line sense amplifier, semiconductor memory device having the same, and method of testing bit-line micro-bridge defect
- Patent Title (中): 位线读出放大器，具有相同的半导体存储器件以及测试位线微桥缺陷的方法
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Application No.: US12958726Application Date: 2010-12-02
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Publication No.: US08395953B2Publication Date: 2013-03-12
- Inventor: Cheol Kim , Sang-Kyun Park , Jung-Bae Lee , Jun-Phyo Lee
- Applicant: Cheol Kim , Sang-Kyun Park , Jung-Bae Lee , Jun-Phyo Lee
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2010-0013481 20100212
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
The bit-line sense amplifier includes a driving-voltage control circuit and an amplifier. The driving-voltage control circuit generates a first test driving voltage having a voltage level of a pre-charge voltage, a second test driving voltage having a voltage level of a pre-charge voltage added by a voltage difference between a bit-line and a complementary bit-line, and a third test driving voltage having a voltage level of a pre-charge voltage subtracted by the voltage difference in a test mode. The amplifier senses and amplifies a voltage difference between the bit-line and the complementary bit-line.
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